Datasheet > TSM4N60ECPROG

TSM4N60ECPROG

更新时间： 2024-11-12 01:11:59

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
7页	1202K
描述
600V, 4A, 2.5Î© N-Channel Power MOSFET

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TSM4N60ECPROG 数据手册

TSM4N60E

600V, 4A, 2.5Ω

N-Channel Power MOSFET

Pin Definition:

1. Gate

2. Drain

TO-251

(IPAK)

TO-252

(DPAK)

Key Parameter Performance

Parameter

V_DS

Value

600

2.5

Unit

3. Source

R_DS(on)(max)

Q_g(typ)

Features

Block Diagram

●

100% Avalanche Tested

G-S ESD Protection Diode Embedded

Ordering Information

Part No.

Package

Packing

75pcs / Tube

TSM4N60ECH C5G

TO-251

TSM4N60ECP ROG

TO-252

2.5kpcs / 13” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

N-Channel MOSFET with ESD Protection

Absolute Maximum Ratings (Tc=25^oC unless otherwise noted)

Parameter

Symbol

V_DS

Limit

600

±30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

Tc=25℃

Continuous Drain Current ^{(Note 1)}

I_D

2.34

Tc=100℃

Pulsed Drain Current ^{(Note 2)}

I_DM

I_AR

Repetitive Avalanche Current ^{(Note 1)}

Repetitive Avalanche Energy^{(Note 1)}

Single Pulse Avalanche Energy ^{(Note 3)}

8.62

E_AR

E_AS

192

@ T_C= 25℃

86.2

Total Power Dissipation

P_D

Derate above T_C= 25℃

0.68

W/℃

V/ns

℃

Peak Diode Recovery dV/dt ^{(Note 4)}

Operating Junction Temperature

Storage Temperature Range

dV/dt

T_J

4.5

150

-55 to +150

T_STG

℃

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

R_ӨJC

R_ӨJA

1.45

110

℃/W

1/7

Version: A14

12 3 4 5 6 7

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