Datasheet > TSM4N60_10

TSM4N60_10

更新时间： 2024-11-11 08:33:27

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
11页	334K
描述
600V N-Channel Power MOSFET

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TSM4N60_10 数据手册

TSM4N60

600V N-Channel Power MOSFET

TO-220

ITO-220

TO-251

(IPAK)

TO-252

(DPAK)

Pin Definition:

1. Gate

2. Drain

3. Source

PRODUCT SUMMARY

_DS(V)

R_DS(on)(Ω)

I_D(A)

600

2.5 @ V_GS=10V

General Description

The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There

devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic

lamp ballasts base on half bridge topology.

Block Diagram

Features

●

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Ordering Information

Part No.

Package

Packing

50pcs / Tube

TSM4N60CZ C0

TSM4N60CZ C0G

TSM4N60CI C0

TSM4N60CI C0G

TSM4N60CH C5

TSM4N60CH C5G

TSM4N60CP RO

TSM4N60CP ROG

TO-220

ITO-220

TO-251

TO-252

50pcs / Tube

N-Channel MOSFET

50pcs / Tube

75pcs / Tube

2.5Kpcs / 13” Reel

Note: “G” denotes for Halogen Free

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

600

Gate-Source Voltage

V_GS

±30

Continuous Drain Current

I_D

Pulsed Drain Current

I_DM

Single Pulse Drain to Source Avalanche Energy (note c)

Avalanche Current, Repetitive or Not-Repetitive (note d)

Peak Diode Recovery dv/dt (note e)

EAS

IAR

120

V/ns

dv/dt

4.5

TO-220 / TO-251 / TO-252

ITO-220

Total Power Dissipation

@T_C= 25^oC

P_TOT

Operating Junction Temperature

T_J

+150

-55 to +150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

1/11

Version: D10

12 3 4 5 6 7...11

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