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TSFF5210_08 PDF预览

TSFF5210_08

更新时间: 2024-11-18 05:55:55
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 109K
描述
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero

TSFF5210_08 数据手册

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TSFF5210  
Vishay Semiconductors  
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,  
GaAlAs Double Hetero  
FEATURES  
• Package type: leaded  
• Package form: T-1 3/4  
• Dimensions (in mm): 5  
• Leads with stand-off  
• Peak wavelength: λp = 870 nm  
• High reliability  
• High radiant power  
94 8390  
• High radiant intensity  
• Angle of half intensity: ϕ = 10ꢀ  
• Low forward voltage  
• Suitable for high pulse current operation  
• High modulation bandwidth: fc = 24 MHz  
DESCRIPTION  
• Good spectral matching with Si photodetectors  
TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs  
double hetero (DH) technology with high radiant power and  
high speed, molded in a clear, untinted plastic package.  
• Lead (Pb)-free component in accordance with  
RoHS 2002/95/EC and WEEE 2002/96/EC  
APPLICATIONS  
• Infrared video data transmission between camcorder and  
TV set  
• Free air data transmission systems with high modulation  
frequencies or high data transmission rate requirements  
• Smoke-automatic fire detectors  
PRODUCT SUMMARY  
COMPONENT  
Ie (mW/sr)  
ϕ (deg)  
λ
P (nm)  
tr (ns)  
TSFF5210  
180  
10  
870  
15  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
Bulk  
REMARKS  
PACKAGE FORM  
TSFF5210  
MOQ: 4000 pcs, 4000 pcs/bulk  
T-1¾  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Reverse voltage  
VR  
IF  
5
V
mA  
mA  
A
Forward current  
100  
200  
1
Peak forward current  
Surge forward current  
Power dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
IFM  
IFSM  
PV  
180  
mW  
Document Number: 81090  
Rev. 1.6, 04-Aug-08  
For technical questions, contact: emittertechsupport@vishay.com  
www.vishay.com  
131  

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