Datasheet > TSFF5210_08

TSFF5210_08

更新时间： 2024-11-06 05:55:55

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	109K
描述
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero

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TSFF5210_08 数据手册

TSFF5210

Vishay Semiconductors

High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,

GaAlAs Double Hetero

FEATURES

• Package type: leaded

• Package form: T-1 3/4

• Dimensions (in mm): ∅ 5

• Leads with stand-off

• Peak wavelength: λ_p= 870 nm

• High reliability

• High radiant power

94 8390

• High radiant intensity

• Angle of half intensity: ϕ = 10ꢀ

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: f_c= 24 MHz

DESCRIPTION

• Good spectral matching with Si photodetectors

TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• Infrared video data transmission between camcorder and

TV set

• Free air data transmission systems with high modulation

frequencies or high data transmission rate requirements

• Smoke-automatic fire detectors

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

_P(nm)

t_r(ns)

TSFF5210

180

870

Note

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

PACKAGE FORM

TSFF5210

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

Forward current

100

200

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

I_FM

I_FSM

P_V

180

Document Number: 81090

Rev. 1.6, 04-Aug-08

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

131

12 3 4 5

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TSFF5410_09	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero