Datasheet > TSFF5510_11

TSFF5510_11

更新时间： 2024-11-07 01:25:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	98K
描述
High Speed Infrared Emitting Diode

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中文翻译

获取价格

数据手册

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TSFF5510_11 数据手册

TSFF5510

Vishay Semiconductors

www.vishay.com

High Speed Infrared Emitting Diode, 870 nm,

GaAlAs Double Hetero

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Peak wavelength: _p= 870 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = 38ꢀ

• Low forward voltage

21061

• Suitable for high pulse current operation

• High modulation bandwidth: f_c= 24 MHz

• Good spectral matching with Si photodetectors

DESCRIPTION

TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• Infrared video data transmission between camcorder and

TV set

• Free air data transmission systems with high data

transmission rates

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

 (deg)

_p(nm)

t_r(ns)

TSFF5510

870

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

MOQ: 4000 pcs, 4000 pcs/bulk

PACKAGE FORM

TSFF5510

T-1¾

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 ꢀC, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Forward current

I_F

100

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 μs

t_p= 100 μs

I_FM

200

I_FSM

P_V

180

ꢀC

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/ambient

T_j

100

T_amb

T_stg

T_sd

- 40 to + 85

- 40 to + 100

260

ꢀC

t  5 s, 2 mm from case

J-STD-051, leads 7 mm soldered on PCB

ꢀC

R_thJA

230

K/W

Rev. 1.3, 23-Aug-11

Document Number: 81835

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与TSFF5510_11相关器件

型号	品牌	获取价格	描述	数据表
TSFF5510-ASZ	VISHAY	获取价格	Infrared LED, LAMP,IRED,870NM PEAK WAVELENGTH,LED-2B
TSFF6210	VISHAY	获取价格	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
TSFF6210_09	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6210-MSZ	VISHAY	获取价格	Infrared LED, 870nm
TSFF6410	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6410-ASZ	VISHAY	获取价格	TSFF6410 - High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6410-ESZ	VISHAY	获取价格	暂无描述
TSFM	VISHAY	获取价格	Thin Film Top-Contact Resistor for High Temperature Applications
TSFP-14V-K5GG	JST	获取价格	该TSF连接器是一种组合式连接器，具有浮动功能，便于设备的设计，通过在两端四个接地触点上加
TSFP-16V-K5GG	JST	获取价格	该TSF连接器是一种组合式连接器，具有浮动功能，便于设备的设计，通过在两端四个接地触点上加

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