Datasheet > TSFF5410_09

TSFF5410_09

更新时间： 2024-11-06 08:34:11

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	111K
描述
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

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TSFF5410_09 数据手册

TSFF5410

Vishay Semiconductors

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): ∅ 5

• Leads with stand-off

• Peak wavelength: λ_p= 870 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = 22ꢀ

94 8390

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: f_c= 24 MHz

• Good spectral matching to Si photodetectors

DESCRIPTION

• Compliant to RoHS directive 2002/95/EC and in

TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs

accordance to WEEE 2002/96/EC

double hetero (DH) technology with high radiant power and

• Halogen-free according to IEC 61249-2-21 definition

high speed, molded in a clear, untinted plastic package.

APPLICATIONS

• Infrared video data transmission between camcorder and

TV set

• Free air data transmission systems with high modulation

frequencies or high data transmission rate requirements

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

_P(nm)

t_r(ns)

TSFF5410

870

Note

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

PACKAGE FORM

TSFF5410

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

100

Forward current

Peak forward current

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

I_FM

I_FSM

P_V

200

Surge forward current

Power dissipation

180

ꢀC

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

T_j

100

T_amb

T_stg

T_sd

- 40 to + 85

- 40 to + 100

260

ꢀC

t ≤ 5 s, 2 mm from case

ꢀC

Thermal resistance junction/ambient

Note

_amb= 25 ꢀC, unless otherwise specified

J-STD-051, leads 7 mm, soldered on PCB

R_thJA

230

K/W

Document Number: 81091

Rev. 1.7, 29-Jun-09

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

12 3 4 5

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TSFF5510	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
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TSFF5510_09	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero