Datasheet > TSFF5510_09

TSFF5510_09

更新时间： 2024-11-18 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	106K
描述
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TSFF5510_09 数据手册

TSFF5510

Vishay Semiconductors

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): ∅ 5

• Leads with stand-off

• Peak wavelength: λ_p= 870 nm

• High reliability

• High radiant power

• High radiant intensity

21061

• Angle of half intensity: ϕ = 38ꢀ

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: f_c= 24 MHz

DESCRIPTION

TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs

• Good spectral matching with Si photodetectors

• Compliant to RoHS directive 2002/95/EC and in

double hetero (DH) technology with high radiant power and

accordance to WEEE 2002/96/EC

high speed, molded in a clear, untinted plastic package.

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• Infrared video data transmission between camcorder and

TV set

• Free air data transmission systems with high data

transmission rates

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

λ_p(nm)

t_r(ns)

TSFF5510

870

Note

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

PACKAGE FORM

TSFF5510

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

100

Forward current

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

I_FM

I_FSM

P_V

200

180

ꢀC

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

T_j

100

T_amb

T_stg

T_sd

- 40 to + 85

- 40 to + 100

260

ꢀC

t ≤ 5 s, 2 mm from case

ꢀC

Thermal resistance junction/ambient

Note

_amb= 25 ꢀC, unless otherwise specified

J-STD-051, leads 7 mm soldered on PCB

R_thJA

230

K/W

Document Number: 81835

Rev. 1.2, 25-Jun-09

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与TSFF5510_09相关器件

型号	品牌	获取价格	描述	数据表
TSFF5510_11	VISHAY	获取价格	High Speed Infrared Emitting Diode
TSFF5510-ASZ	VISHAY	获取价格	Infrared LED, LAMP,IRED,870NM PEAK WAVELENGTH,LED-2B
TSFF6210	VISHAY	获取价格	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
TSFF6210_09	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6210-MSZ	VISHAY	获取价格	Infrared LED, 870nm
TSFF6410	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6410-ASZ	VISHAY	获取价格	TSFF6410 - High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6410-ESZ	VISHAY	获取价格	暂无描述
TSFM	VISHAY	获取价格	Thin Film Top-Contact Resistor for High Temperature Applications
TSFP-14V-K5GG	JST	获取价格	该TSF连接器是一种组合式连接器，具有浮动功能，便于设备的设计，通过在两端四个接地触点上加

与TSFF5510_09相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

TSFF5510_09

TSFF5510_09 数据手册

与TSFF5510_09相关器件

与TSFF5510_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TSFF5510_09

TSFF5510_09 数据手册

与TSFF5510_09相关器件

与TSFF5510_09相关文章

您还可以找

您在本页遇到什么问题？