5秒后页面跳转
TSFF5410-MSZ PDF预览

TSFF5410-MSZ

更新时间: 2024-09-16 13:14:59
品牌 Logo 应用领域
威世 - VISHAY 半导体红外LED光电二极管
页数 文件大小 规格书
5页 111K
描述
暂无描述

TSFF5410-MSZ 数据手册

 浏览型号TSFF5410-MSZ的Datasheet PDF文件第2页浏览型号TSFF5410-MSZ的Datasheet PDF文件第3页浏览型号TSFF5410-MSZ的Datasheet PDF文件第4页浏览型号TSFF5410-MSZ的Datasheet PDF文件第5页 
TSFF5410  
Vishay Semiconductors  
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero  
FEATURES  
• Package type: leaded  
• Package form: T-1¾  
• Dimensions (in mm): 5  
• Leads with stand-off  
• Peak wavelength: λp = 870 nm  
• High reliability  
• High radiant power  
• High radiant intensity  
• Angle of half intensity: ϕ = 22ꢀ  
94 8390  
• Low forward voltage  
• Suitable for high pulse current operation  
• High modulation bandwidth: fc = 24 MHz  
• Good spectral matching to Si photodetectors  
DESCRIPTION  
• Compliant to RoHS directive 2002/95/EC and in  
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs  
accordance to WEEE 2002/96/EC  
double hetero (DH) technology with high radiant power and  
• Halogen-free according to IEC 61249-2-21 definition  
high speed, molded in a clear, untinted plastic package.  
APPLICATIONS  
• Infrared video data transmission between camcorder and  
TV set  
• Free air data transmission systems with high modulation  
frequencies or high data transmission rate requirements  
PRODUCT SUMMARY  
COMPONENT  
Ie (mW/sr)  
ϕ (deg)  
λ
P (nm)  
tr (ns)  
TSFF5410  
70  
22  
870  
15  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
Bulk  
REMARKS  
PACKAGE FORM  
TSFF5410  
MOQ: 4000 pcs, 4000 pcs/bulk  
T-1¾  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Reverse voltage  
VR  
IF  
5
100  
V
mA  
mA  
A
Forward current  
Peak forward current  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
IFM  
IFSM  
PV  
200  
Surge forward current  
Power dissipation  
1
180  
mW  
ꢀC  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
ꢀC  
ꢀC  
t 5 s, 2 mm from case  
ꢀC  
Thermal resistance junction/ambient  
Note  
amb = 25 ꢀC, unless otherwise specified  
J-STD-051, leads 7 mm, soldered on PCB  
RthJA  
230  
K/W  
T
Document Number: 81091  
Rev. 1.7, 29-Jun-09  
For technical questions, contact: emittertechsupport@vishay.com  
www.vishay.com  
1

与TSFF5410-MSZ相关器件

型号 品牌 获取价格 描述 数据表
TSFF5510 VISHAY

获取价格

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF5510_08 VISHAY

获取价格

High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
TSFF5510_09 VISHAY

获取价格

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF5510_11 VISHAY

获取价格

High Speed Infrared Emitting Diode
TSFF5510-ASZ VISHAY

获取价格

Infrared LED, LAMP,IRED,870NM PEAK WAVELENGTH,LED-2B
TSFF6210 VISHAY

获取价格

High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
TSFF6210_09 VISHAY

获取价格

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6210-MSZ VISHAY

获取价格

Infrared LED, 870nm
TSFF6410 VISHAY

获取价格

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF6410-ASZ VISHAY

获取价格

TSFF6410 - High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero