TSFF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1 3/4
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
94 8390
• Angle of half intensity: ϕ = 10ꢀ
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
DESCRIPTION
• Compliant to RoHS directive 2002/95/EC and in
TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs
accordance to WEEE 2002/96/EC
double hetero (DH) technology with high radiant power and
• Halogen-free according to IEC 61249-2-21 definition
high speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSFF5210
180
10
870
15
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSFF5210
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
100
V
mA
mA
A
Forward current
Peak forward current
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
200
Surge forward current
Power dissipation
1
180
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
ꢀC
Thermal resistance junction/ambient
Note
amb = 25 ꢀC, unless otherwise specified
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
T
Document Number: 81090
Rev. 1.7, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
1