5秒后页面跳转
TSFF5400-ASZ PDF预览

TSFF5400-ASZ

更新时间: 2024-11-21 17:04:07
品牌 Logo 应用领域
威世 - VISHAY 半导体
页数 文件大小 规格书
7页 132K
描述
Infrared LED, 870nm

TSFF5400-ASZ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
最大正向电流:0.1 A最大正向电压:3 V
安装特点:THROUGH HOLE MOUNT最高工作温度:85 °C
最低工作温度:-25 °C峰值波长:870 nm
最大反向电压:5 V半导体材料:GaAlAs
光谱带宽:4e-8 m子类别:Infrared LEDs
表面贴装:NO视角:44 deg
Base Number Matches:1

TSFF5400-ASZ 数据手册

 浏览型号TSFF5400-ASZ的Datasheet PDF文件第2页浏览型号TSFF5400-ASZ的Datasheet PDF文件第3页浏览型号TSFF5400-ASZ的Datasheet PDF文件第4页浏览型号TSFF5400-ASZ的Datasheet PDF文件第5页浏览型号TSFF5400-ASZ的Datasheet PDF文件第6页浏览型号TSFF5400-ASZ的Datasheet PDF文件第7页 
TSFF5400  
Vishay Semiconductors  
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double  
Hetero  
Description  
TSFF5400 is a high speed infrared emitting diode in  
GaAlAs on GaAlAs double hetero (DH) technology,  
molded in a clear, untinted plastic package.  
The new technology combines the high speed of DH-  
GaAlAs with the efficiency of standard GaAlAs and  
the low forward voltage of the standard GaAs technol-  
94 8390  
ogy.  
Features  
• High modulation bandwidth (35 MHz)  
• Extra high radiant power and radiant intensity  
• Low forward voltage  
Applications  
• Suitable for high pulse current operation  
• Standard T-1¾ (5 mm) package  
• Angle of half intensity ϕ = 22°  
Infrared video data transmission between Camcorder  
and TV set.  
Free air data transmission systems with high modu-  
lation frequencies or high data transmission rate  
requirements.  
• Peak wavelength λ = 870 nm  
p
• High reliability  
• Good spectral matching to Si photodetectors  
• Lead-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse Voltage  
Test condition  
Symbol  
VR  
Value  
5
Unit  
V
Forward current  
IF  
IFM  
IFSM  
PV  
100  
300  
mA  
mA  
A
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
1
250  
mW  
°C  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- 25 to + 85  
- 25 to + 85  
260  
°C  
°C  
t 5 sec, 2 mm from case  
°C  
Thermal Resistance Junction/  
Ambient  
RthJA  
300  
K/W  
Document Number 81016  
Rev. 1.8, 08-Mar-05  
www.vishay.com  
1

与TSFF5400-ASZ相关器件

型号 品牌 获取价格 描述 数据表
TSFF5410 VISHAY

获取价格

High Speed IR Emitting Diode in 5 mm (T-1 3 /4) Package
TSFF5410_08 VISHAY

获取价格

High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
TSFF5410_09 VISHAY

获取价格

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF5410-AS21 VISHAY

获取价格

Infrared LED, LAMP,IRED,870NM PEAK WAVELENGTH,LED-2B
TSFF5410-ASZ VISHAY

获取价格

TSFF5410 - High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF5410-CSZ VISHAY

获取价格

Infrared LED, 870nm
TSFF5410-ES21 VISHAY

获取价格

Infrared LED, LAMP,IRED,870NM PEAK WAVELENGTH,LED-2B
TSFF5410-ESZ VISHAY

获取价格

Infrared LED, LAMP,IRED,870NM PEAK WAVELENGTH,LED-2B
TSFF5410-MS21 VISHAY

获取价格

Infrared LED, LAMP,IRED,870NM PEAK WAVELENGTH,LED-2B
TSFF5410-MSZ VISHAY

获取价格

暂无描述