Datasheet > TPCP8102(TE85L,F)

TPCP8102(TE85L,F)

更新时间： 2024-01-10 04:59:14

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	175K
描述
MOSFET P-CH 20V 7.3A PS-8

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数据手册

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TPCP8102(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.54	Base Number Matches：	1

TPCP8102(TE85L,F) 数据手册

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TPCP8102

Electrical Characteristics (Ta = 25°C)

Characteristic

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

= ± 10 V, V = 0 V

⎯

±10

-10

⎯

μA

GSS

Drain cutoff current

= -20 V, V

= 0 V

DSS

= -10 mA, V

-20

-8

⎯

(BR) DSS

(BR) DSX

Drain-source breakdown voltage

Gate threshold voltage

= 12 V

⎯

= -10 V, I = -200 μA

-0.45

⎯

-1.2

⎯

= -2.0 V, I = -1.8 A

Drain-source ON-resistance

= -2.5 V, I = -3.6 A

⎯

mΩ

DS (ON)

= -4.5 V, I = -3.6 A

⎯

13.5

Forward transfer admittance

Input capacitance

|Y |

= -10 V, I = -3.6 A

⎯

2560

330

380

⎯

iss

= -10 V, V

= 0 V, f = 1 MHz

Reverse transfer capacitance

Output capacitance

⎯

rss

⎯

oss

Rise time

⎯

0 V

= -3.6 A

OUT

-5 V

Turn-on time

142

Switching time

Fall time

∼

−

-10 V

Turn-off time

off

Duty 1%, t = 10 μs

Total gate charge

(gate-source plus gate-drain)

∼

−

-16 V, V

= -7.2 A

= -5 V,

Gate-source charge 1

⎯

5.4

⎯

gs1

Gate-drain (“Miller”) charge

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

⎯

-28.8

1.2

DRP

Forward voltage (diode)

= -3.6 A, V

= 0 V

DSF

2006-11-17

1 234 5 6 7

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