Datasheet > TPCP8012

TPCP8012

更新时间： 2023-12-20 18:45:32

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	252K
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TPCP8012 数据手册

TPCP8012

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Note 1)

(Note 2)

(Note 3)

(Note 4)

IDP

(t = 5 s)

2.01

Power dissipation

Single-pulse avalanche energy

Avalanche current

EAS

IAR

72.1

Channel temperature

Storage temperature

(Note 5)

Tch

Tstg

175



-55 to 175

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

5. Thermal Characteristics

Characteristics

Symbol

Max

Unit

Channel-to-ambient thermal resistance

(t = 5 s)

(Note 2)

(Note 3)

Rth(ch-a)

74.6

150

/W

Note 1: Ensure that the channel temperature does not exceed 175.

Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1

Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2

Note 4: VDD = 25 V, Tch = 25 (initial), L = 1.531 mH, RG = 1 Ω, IAR = 8 A

Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.

Fig. 5.1 Device Mounted on a Glass-Epoxy

Board (a)

Fig. 5.2 Device Mounted on a Glass-Epoxy

Board (b)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2016-02-23

Rev.6.0

123 4 5 6 7...9

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