Datasheet > TK3904NND03

TK3904NND03

更新时间： 2024-02-28 11:31:41

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
2页	321K
描述
WBFBP-03B Plastic-Encapsulate Transistors

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数据手册

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TK3904NND03 数据手册

WILLAS

TK3904NND03

WBFBP-03B Plastic-Encapsulate Transistors

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

TRANSISTOR

TOP

DESCRIPTION

NPN Epitaxial Silicon Transistor

FEATURES

1. BASE

Epitaxial Planar Die Construction

Complementary PNP Type Available (TK3906NND03)

Ultra-Small Surface Mount Package

Also Available in Lead Free Version

2. EMITTER

3. COLLECTOR

BACK

APPLICATION

General Purpose Amplifier, switching

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING:1N

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

0.2

0.15

150

P_C

℃

T_J

Junction Temperature

Storage Temperature

T_stg

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=10μA,I_C=0

I_CEX

I_EBO

V_CE=30V,V_EB(off)=3V

0.05

0.1

μA

Emitter cut-off current

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

V_CE=1V,I_C=0.1mA

V_CE=1V,I_C=1mA

V_CE=1V,I_C=10mA

V_CE=1V,I_C=50mA

V_CE=1V,I_C=100mA

DC current gain

100

300

V_CE(sat)1I_C=10mA,I_B=1mA

V_CE(sat)2I_C=50mA,I_B=5mA

V_BE(sat)1I_C=10mA,I_B=1mA

V_BE(sat)2I_C=50mA,I_B=5mA

0.2

0.3

Collector-emitter saturation voltage

0.65

300

0.85

0.95

Base-emitter saturation voltage

Transition frequency

f_T

V_CE=20V,I_C=10mA,f=100MHz

MHz

2012-10

WILLAS ELECTRONIC CORP.

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