Datasheet > TK3906LED03

TK3906LED03

更新时间： 2024-09-27 14:53:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	503K
描述
WBFBP-03E

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中文翻译

获取价格

数据手册

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TK3906LED03 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03E Plastic-Encapsulate Transistors

TK3906LED03

TRANSISTOR (PNP)

WBFBP-03E

FEATURE

 Ultra Small SMD Plastic Package

 Epitaxial Planar Die Construction

 Complementary to TK3904LED03

 Available in Lead Free Version

1. BASE

APPLICATION

2. EMITTER

3. COLLECTOR

 General-Purpose Amplification and Switching Transistor for

Portable Equipment :( i.e. Mobile phone, MP3, MD, CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING: 3N

Top View

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-40

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-40

-5

-200

℃/W

℃

P_C

Collector Power Dissipation

100

R_ΘJA

Thermal Resistance from Junction to Ambient

1250

-55～+150

T_J,T_stg

Operation Junction and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test condition

I_C=-10µA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

-40

V_(BR)CEO

V_(BR)EBO

I_CEX

I_C=-1mA, I_B=0

-40

-5

I_E=-10µA, I_C=0

V_CE=-30V, V_EB(off)=-3V

V_EB=-5V, I_C=0

-50

Emitter cut-off current

I_EBO

-100

h_FE(1)

V_CE=-1V, I_C=-0.1mA

V_CE=-1V, I_C=-1mA

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C=-50mA

V_CE=-1V, I_C=-100mA

I_C=-10mA, I_B=-1mA

h_FE(2)

DC current gain

h_FE(3)

100

300

h_FE(4)

h_FE(5)

Collector-emitter saturation voltage

V_CE(sat)1

-0.25

www.jscj-elec.comww.cj-elec.com

Rev.-2.0A,Jun,

12 3 4 5

中文翻译

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