Datasheet > TK3R1P04PL

TK3R1P04PL

更新时间： 2024-11-27 14:58:11

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TK3R1P04PL 数据手册

TK3R1P04PL

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TK3R1P04PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 19 nC (typ.)

(3) Small output charge: Qoss = 42 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK

Start of commercial production

2017-04

2021-01-29

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TK3R2A08QM	TOSHIBA	获取价格	N-ch MOSFET, 80 V, 0.0032 Ω@10V, TO-220SIS, U
TK3R2A10PL	TOSHIBA	获取价格	N-ch MOSFET, 100 V, 0.0032 Ω@10V, TO-220SIS,
TK3R2E06PL	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 0.0032 Ω@10V, TO-220, U-MO
TK3R3A06PL	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 0.0033 Ω@10V, TO-220SIS, U
TK3R3E03GL	TOSHIBA	获取价格	EOL announced
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