Datasheet > TK3P80E

TK3P80E

更新时间： 2024-11-27 14:57:43

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	378K
描述
N-ch MOSFET, 800 V, 4.9 Ω@10V, DPAK, π-MOSⅧ

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TK3P80E 数据手册

TK3P80E

MOSFETs Silicon N-Channel MOS (π-MOS)

TK3P80E

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 3.9 Ω (typ.)

(2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V)

(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain(Heatsink)

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

800

±30

(Note 1)

IDP

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

EAS

IAR

118

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 1)

IDR

IDRP

Tch

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2014-02

2014-09-17

Rev.3.0

12 3 4 5 6 7...9

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