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TK3A65D PDF预览

TK3A65D

更新时间: 2024-09-26 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体稳压器开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 243K
描述
Switching Voltage Regulators

TK3A65D 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:2.07
Is Samacsys:N雪崩能效等级(Eas):234 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (ID):3 A
最大漏源导通电阻:2.25 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TK3A65D 数据手册

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TK3A65D  
MOSFETs Silicon N-Channel MOS (π-MOS)  
TK3A65D  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 1.93 (typ.)  
(2) High forward transfer admittance: |Yfs| = 2.2 S (typ.)  
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)  
(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)  
3. Packaging and Internal Circuit  
1: Gate (G)  
2: Drain (D)  
3: Source (S)  
TO-220SIS  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
650  
±30  
(Note 1)  
(Note 1)  
3
12  
A
IDP  
(Tc = 25)  
PD  
35  
W
mJ  
A
Single-pulse avalanche energy  
Avalanche current  
(Note 2)  
(Note 3)  
EAS  
IAR  
234  
3
Repetitive avalanche energy  
Channel temperature  
EAR  
Tch  
3.5  
mJ  
150  
-55 to 150  
Storage temperature  
Tstg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2011-02-15  
Rev.2.0  
1

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