TK40J60U(Q)

更新时间： 2024-11-29 13:14:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
6页	202K
描述
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,40A I(D),TO-247VAR

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技术参数
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TK40J60U(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	40 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	320 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

TK40J60U(Q) 数据手册

TK40J60T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)

TK40J60T

Switching Regulator Applications

Unit: mm

Ф3.2±0.2

15.9max.

•

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y ⎪ = 25 S (typ.)

= 0.068Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (V

= 600 V)

DSS

Enhancement-mode: V = 3.0~5.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

2.0±0.3

＋0.3

Characteristics

Drain-source voltage

Symbol

Rating

Unit

1.0

－0.25

600

±30

DSS

5.45±0.2

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

1. Gate

Drain power dissipation (Tc = 25°C)

2. Drain(heat sink)

3. Source

400

576

Single pulse avalanche energy

(Note 2)

JEDEC

⎯

Avalanche current

(Note 3)

JEITA

SC-65

2-16C1B

Repetitive avalanche energy

Channel temperature

°C

TOSHIBA

150

Weight : 4.6 g (typ.)

Storage temperature range

stg

-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.313

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25 °C (initial), L = 0.63 mH, R = 25 Ω, I = 40 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2007-08-30

12 3 4 5 6

中文翻译

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