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TK40S06N1L PDF预览

TK40S06N1L

更新时间: 2024-11-30 14:58:07
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 273K
描述
N-ch MOSFET, 60 V, 40 A, 0.0105 Ω@10V, DPAK+

TK40S06N1L 数据手册

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TK40S06N1L  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TK40S06N1L  
1. Applications  
Automotive  
Motor Drivers  
Switching Voltage Regulators  
2. Features  
(1) AEC-Q101 qualified  
(2) Low drain-source on-resistance: RDS(ON) = 8.7 m(typ.) (VGS = 10 V)  
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)  
(4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (heatsink)  
3: Source  
DPAK+  
Start of commercial production  
2015-06  
©2018-2020  
2020-06-24  
Rev.5.0  
1
Toshiba Electronic Devices & Storage Corporation  

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