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TK40J60T(F)

更新时间： 2024-11-29 13:02:07
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东芝 - TOSHIBA 晶体晶体管功率场效应晶体管开关脉冲局域网
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TK40J60T(F) 数据手册

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TK40J60T  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)  
TK40J60T  
Switching Regulator Applications  
Unit: mm  
Ф3.2±0.2  
15.9max.  
•
•
•
•
Low drain-source ON resistance: R  
High forward transfer admittance: ⎪Y ⎪ = 25 S (typ.)  
= 0.068Ω (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 100 μA (V  
= 600 V)  
DS  
DSS  
Enhancement-mode: V = 3.0~5.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
2.0±0.3  
＋0.3  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
1.0  
－0.25  
V
V
600  
±30  
40  
V
V
DSS  
5.45±0.2  
5.45±0.2  
Gate-source voltage  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (t = 1 ms)  
I
80  
DP  
1
2
3
(Note 1)  
1. Gate  
Drain power dissipation (Tc = 25°C)  
2. Drain(heat sink)  
3. Source  
P
400  
576  
W
D
AS  
AR  
Single pulse avalanche energy  
E
mJ  
(Note 2)  
JEDEC  
⎯
Avalanche current  
(Note 3)  
I
40  
40  
A
JEITA  
SC-65  
2-16C1B  
Repetitive avalanche energy  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
T
ch  
150  
Weight : 4.6 g (typ.)  
Storage temperature range  
T
stg  
-55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
2
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
0.313  
50  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Please use devices on conditions that the channel temperature is below 150°C.  
Note 2: = 90 V, T = 25 °C (initial), L = 0.63 mH, R = 25 Ω, I = 40 A  
1
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
3
1
2007-08-30  
123456

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