TK40F08K3

更新时间： 2024-11-29 05:52:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动
页数	文件大小	规格书
7页	215K
描述
Swiching Regulator, DC-DC Converter Applications Motor Drive Applications

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技术参数
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TK40F08K3 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	雪崩能效等级（Eas）：	164 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	75 V	最大漏极电流 (ID)：	40 A
最大漏源导通电阻：	0.0085 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	120 A	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TK40F08K3 数据手册

TK40F08K3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)

TK40F08K3

Swiching Regulator, DC-DC Converter Applications

Motor Drive Applications

Unit: mm

•

Low drain-source ON-resistance: R

= 6.5 mΩ (typ.)

DS (ON)

10.0 ± 0.3

9.5 ± 0.2

Low leakage current: I

= 10 μA (max) (V

= 75 V)

DSS

0.4 ± 0.1

Enhancement-model: V = 3.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1.1

0.76 ± 0.1

1.4 ± 0.1

Characteristics

Drain-source voltage

Symbol

Rating

Unit

2.35 ± 0.1

0.4 ± 0.1

2.54 ± 0.25

2.34 ± 0.25

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

Drain current

Pulse (Note 1)

120

107

1. GATE

Drain power dissipation (Tc = 25°C)

2. DRAIN

（HEAT SINK）

Single pulse avalanche energy

3. SOURSE

164

(Note 2)

8.0

Avalanche current

1.1

JEDEC

JEITA

⎯

Repetitive avalanche energy (Note 3)

°C

Channel temperature

(Note 4)

175

TOSHIBA

2-10W1A

Storage temperature range (Note 4)

stg

−55 to 175

Weight: 1.07 g (typ.)

Thermal Characteristics

Characteristics

Symbol

Max

1.4

Unit

Thermal resistance, channel to case

°C/W

th (ch-c)

Note 1: Please use devices on condition that the channel temperature is below 175°C.

Note 2: = 25 V, T = 25°C, L = 152 μH, R = 1 Ω, I = 40 A

Note 3: Repetitive rating; pulse width limited by maximum channel temperature.

Note 4: 175°C refers to AEC-Q101.

Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic sensitive device. Please handle with caution.

2010-02-23

12 3 4 5 6 7

中文翻译

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