Datasheet > TK3R3E03GL

TK3R3E03GL

更新时间： 2024-11-30 14:58:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	432K
描述
EOL announced

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数据手册

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TK3R3E03GL 数据手册

TK3R3E03GL

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TK3R3E03GL

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID =0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

TO-220

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Silicon Limit)

(Note 1), (Note 2)

(Note 1)

147

(t = 100 µs)

(Tc = 25 )

(Note 1)

IDP

360

104

Single-pulse avalanche energy

Single-pulse avalanche current

Channel temperature

(Note 3)

EAS

IAS

Tch

Tstg

150



Storage temperature

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2015-12

2015-12-11

Rev.1.0

12 3 4 5 6 7...9

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