Datasheet > TK3906NND03

TK3906NND03

更新时间： 2024-11-05 12:23:51

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
2页	333K
描述
WBFBP-03B Plastic-Encapsulate Transistors

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数据手册

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TK3906NND03 数据手册

WILLAS

TK3906NND03

WBFBP-03B Plastic-Encapsulate Transistors

TRANSISTOR

DESCRIPTION

PNP Epitaxial Silicon Transistor

WBFBP-03B

(1.2×1.2×0.5)

TOP

unit: mm

FEATURES

Epitaxial Planar Die Construction

Complementary NPN Type Available (TK3904NND03)

Ultra-Small Surface Mount Package

Also Available in Lead Free Version

1. BASE

2. EMITTER

3. COLLECTOR

BACK

APPLICATION

General Purpose Amplifier, switching

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

MARKING:3N

MAXIMUM RATINGS(T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-5

B E

Collector Current -Continuous

Power Dissipation

-200

150

℃/W

℃

P_D

Thermal Resistance, Junction to Ambient

Operating Temperature

833

T_J

150

T_stg

Storage and Temperature

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CEX

Test conditions

Min

-40

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C=-10μA,I_E=0

I_C=-1mA,I_B=0

I_E=-10μA,I_C=0

V_CE=-30V,V_EB(off)=-3V

V_EB=-5V,I_C=0

-0.05

-0.1

μA

I_EBO

DC current gain

h_FE(1)

V_CE=-1V,I_C=-0.1mA

V_CE=-1V,I_C=-1mA

V_CE=-1V,I_C=-10mA

V_CE=-1V,I_C=-50mA

V_CE=-1V,I_C=-100mA

I_C=-10mA,I_B=-1mA

I_C=-50mA,I_B=-5mA

I_C=-10mA,I_B=-1mA

I_C=-50mA,I_B=-5mA

V_CE=-20V,I_C=-10mA,f=100MHz

h_FE(2)

h_FE(3)

100

300

h_FE(4)

h_FE(5)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

f_T

-0.25

-0.4

-0.65

250

-0.85

-0.95

MHz

2012-10

WILLAS ELECTRONIC CORP.

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