Datasheet > TK3906LLD03

TK3906LLD03

更新时间： 2024-02-14 23:04:58

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
2页	323K
描述
WBFBP-03D Plastic-Encapsulate Transistors

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TK3906LLD03 数据手册

WILLAS

TK3906LLD03

WBFBP-03D Plastic-Encapsulate Transistors

TRANSISTOR

DESCRIPTION

PNP Epitaxial Silicon Transistor

WBFBP-03D

(1.0×1.0×0.5)

unit: mm

TOP

FEATURES

Epitaxial Planar Die Construction

Complementary NPN Type Available (TK3904LLD03)

Ultra-Small Surface Mount Package

Also Available in Lead Free Version

1. BASE

2. EMITTER

3. COLLECTOR

BACK

APPLICATION

General Purpose Amplifier, switching

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

MARKING:3N

MAXIMUM RATINGS(T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

B E

Collector-Base Voltage

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-5

Collector Current -Continuous

Power Dissipation

-200

100

℃/W

℃

P_D

Thermal Resistance, Junction to Ambient

Operating Temperature

1250

150

T_J

T_stg

Storage and Temperature

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIin

-40

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-10μA,I_C=0

I_CEX

I_EBO

V_CE=-30V,V_EB(off)=-3V

-0.05

-0.1

μA

Emitter cut-off current

V_EB=-5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

V_CE=-1V,I_C=-0.1mA

V_CE=-1V,I_C=-1mA

V_CE=-1V,I_C=-10mA

V_CE=-1V,I_C=-50mA

V_CE=-1V,I_C=-100mA

DC current gain

100

300

V_CE(sat)1I_C=-10mA,I_B=-1mA

V_CE(sat)2I_C=-50mA,I_B=-5mA

V_BE(sat)1I_C=-10mA,I_B=-1mA

V_BE(sat)2I_C=-50mA,I_B=-5mA

-0.25

-0.4

Collector-emitter saturation voltage

-0.65

250

-0.85

-0.95

Base-emitter saturation voltage

Transition frequency

f_T

V_CE=-20V,I_C=-10mA,f=100MHz

MHz

2012-10

WILLAS ELECTRONIC CORP.

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