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TIM6472-4L

更新时间： 2024-01-07 00:02:00
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网放大器晶体管
页数 文件大小 规格书
5页 141K
描述
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power

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中文翻译

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TIM6472-4L 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：unknown风险等级：5.62
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：15 V最大漏极电流 (Abs) (ID)：4 A
最大漏极电流 (ID)：4 AFET 技术：JUNCTION
最高频带：C BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：240
极性/信道类型：N-CHANNEL功耗环境最大值：20 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

TIM6472-4L 数据手册

 浏览型号TIM6472-4L的Datasheet PDF文件第2页浏览型号TIM6472-4L的Datasheet PDF文件第3页浏览型号TIM6472-4L的Datasheet PDF文件第4页浏览型号TIM6472-4L的Datasheet PDF文件第5页 
TOS HIBA  
MICROWAVE POWER GaAs FET  
TIM6472-4L  
Low Distortion Internally Matched Power GaAs FETs (C-Band)  
Features  
• Low intermodulation distortion  
- IM = -45 dBc at Po = 25 dBm,  
3
- Single carrier level  
• High power  
- P  
= 36 dBm at 6.4 GHz to 7.2 GHz  
1dB  
• High gain  
- G = 8.0 dB at 6.4 GHz to 7.2 GHz  
1dB  
• Broad band internally matched  
• Hermetically sealed package  
RF Performance Specifications (Ta = 25° C)  
Characteristics  
Output Power at 1dB  
Symbol  
Condition  
Unit  
Min.  
Typ.  
Max  
P
dBm  
35.0  
36.0  
–
–
1dB  
Compression Point  
Power Gain at 1dB  
Compression Point  
G
dB  
7.0  
8.0  
1dB  
V
= 10V  
DS  
f = 6.4 ~ 7.2 GHz  
Drain Current  
I
A
dB  
%
–
–
1.1  
–
1.5  
±0.6  
–
DS1  
Gain Flatness  
∆G  
Power Added Efficiency  
3rd Order Intermodulation Distortion  
Drain Current  
η
–
30  
-45  
1.1  
–
add  
IM  
dBc  
A
-42  
–
–
3
Note 1  
I
1.5  
80  
DS2  
Channel-Temperature Rise  
∆T  
V
xI xR (c-c)  
°C  
–
ch  
DS DS  
th  
Electrical Characteristics (Ta = 25° C)  
Characteristic  
Trans-conductance  
Symbol  
Condition  
Unit  
Min.  
Typ.  
Max  
V
= 3V  
DS  
gm  
mS  
V
–
900  
–
I
= 1.5A  
DS  
V
= 3V  
DS  
Pinch-off Voltage  
V
I
-2  
-3.5  
-5.0  
GSoff  
DSS  
I
= 20mA  
DS  
V
V
= 3V  
= 0V  
DS  
GS  
Saturated Drain Current  
Gate-Source Breakdown Voltage  
Thermal Resistance  
A
V
–
-5  
–
2.9  
–
3.8  
–
V
I
= -60µA  
GS  
GSO  
Channel  
to case  
R
°C/W  
4
6
th (c-c)  
Note 1: 2 tone Test Pout = 25dBm Single Carrier Level.  
The information contained here is subject to change without notice.  
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties  
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic  
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-  
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types  
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.  
T O S H IB A C O R P O R A T IO N  
MW50850196  
1/5  
12345

中文翻译

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