Datasheet > TIM6472-4UL_09

TIM6472-4UL_09

更新时间： 2022-12-19 10:56:48

品牌	Logo	应用领域
东芝 - TOSHIBA		高功率电源
页数	文件大小	规格书
4页	141K
描述
HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz

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TIM6472-4UL_09 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM6472-4UL

TECHNICAL DATA

FEATURES

HIGH POWER

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

P1dB=36.5dBm at 6.4GHz to 7.2GHz

HIGH GAIN

G1dB= 9.5dB at 6.4GHz to 7.2GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 35.5 36.5

⎯

G1dB

VDS= 10V

IDSset=0.9A

8.5

9.5

⎯

f = 6.4 to 7.2GHz

IDS1

ΔG

1.1

⎯

1.3

±0.6

⎯

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

η_add

IM3

⎯

Two-Tone Test

Po= 25.5dBm

dBc

-44

-47

⎯

(Single Carrier Level)

Drain Current

IDS2

1.1

1.3

⎯

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

Channel Temperature Rise

ΔTch

⎯

Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

IDS= 1.5A

UNIT MIN. TYP. MAX.

Transconductance

900

-2.5

2.6

⎯

-1.0

⎯

-4.0

⎯

Pinch-off Voltage

VGSoff VDS= 3V

IDS= 15mA

Saturated Drain Current

IDSS

VDS= 3V

VGS= 0V

IGS= -50 A

Gate-Source Breakdown

Voltage

VGSO

-5

⎯

C/W

Thermal Resistance

Rth(c-c) Channel to Case

4.5

6.0

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jun. 2009

12 3 4

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