TIM6472-8UL

更新时间： 2024-02-17 18:23:34

品牌	Logo	应用领域
东芝 - TOSHIBA		微波
页数	文件大小	规格书
4页	47K
描述
MICROWAVE POWER GaAs FET

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TIM6472-8UL 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM6472-8UL

TECHNICAL DATA

FEATURES

n HIGH POWER

P1dB=39.5dBm at 6.4GHz to 7.2GHz

n HIGH GAIN

n BROAD BAND INTERNALLY MATCHED FET

n HERMETICALLY SEALED PACKAGE

G1dB= 9.5dB at 6.4GHz to 7.2GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

1dB

dBm 38.5 39.5

G1dB

8.5

9.5

2.2

VDS= 10V

f = 6.4 to 7.2GHz

IDS1

2.6

±0.6

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

h_add

IM3

Two-Tone Test

Po= 28.5dBm

dBc

-44

-47

(Single Carrier Level)

Drain Current

IDS2

2.2

2.6

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

Channel Temperature Rise

DTch

Recommended gate resistance(Rg) : Rg= 150 W(MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

IDS= 3.0A

UNIT MIN. TYP. MAX.

Transconductance

1800

-2.5

5.2

Pinch-off Voltage

VGSoff VDS= 3V

IDS= 30mA

-1.0

-4.0

Saturated Drain Current

IDSS

VDS= 3V

VGS= 0V

Gate-Source Breakdown

Voltage

GSO

IGS= -100 A

-5

Thermal Resistance

Rth(c-c) Channel to Case

C/W

2.5

3.5

u The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jun. 2006

12 3 4

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