生命周期: | Active | 包装说明: | HERMETIC SEALED, 2-16G1B, 2 PIN |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | Factory Lead Time: | 20 weeks |
风险等级: | 5.06 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 15 V |
最大漏极电流 (Abs) (ID): | 14 A | 最大漏极电流 (ID): | 14 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | C BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 75 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
TIM7179-16EL | TOSHIBA | 暂无描述 |
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TIM7179-16L | TOSHIBA | TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power |
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TIM7179-16UL | TOSHIBA | HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz |
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TIM7179-25UL | TOSHIBA | HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz |
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TIM7179-30L | TOSHIBA | TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power |
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TIM7179-30UL | TOSHIBA | TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET |
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