Datasheet > TIM7179-45SL

TIM7179-45SL

更新时间： 2024-01-29 01:08:57

品牌	Logo	应用领域
东芝 - TOSHIBA		微波
页数	文件大小	规格书
4页	83K
描述
MICROWAVE POWER GaAs FET

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TIM7179-45SL 技术参数

生命周期：	Active	包装说明：	HERMETIC SEALED, 2-16G1B, 2 PIN
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	Factory Lead Time：	20 weeks
风险等级：	5.55	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	15 V
最大漏极电流 (ID)：	20 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	C BAND	JESD-30 代码：	R-CDFM-F2
元件数量：	1	端子数量：	2
工作模式：	DEPLETION MODE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

TIM7179-45SL 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM7179-45SL

TECHNICAL DATA

FEATURES

T LOW INTERMODULATION DISTORTION T HIGH GAIN

IM3=-45 dBc at Pout= 35.5dBm

G1dB=6.5dB at 7.1GHz to 7.9GHz

Single Carrier Level

T HIGH POWER

T BROAD BAND INTERNALLY MATCHED FET

T HERMETICALLY SEALED PACKAGE

P1dB=46.5dBm at 7.1GHz to 7.9GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 46.0 46.5

G1dB

5.5

6.5

9.6

VDS= 10V

f = 7.1 to 7.9GHz

IDS1

∆G

10.8

Gain Flatness

±0.8

Power Added Efficiency

3rd Order Intermodulation

Distortion

η_add

IM3

Two-Tone Test

Po=35.5dBm

dBc

-42

-45

(Single Carrier Level)

Drain Current

IDS2

9.6

10.8

100

Channel Temperature Rise

∆Tch

VDS X IDS X Rth(c-c)

Recommended Gate Resistance(Rg) : 28 Ω (Max.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

IDS= 11.0A

VDS= 3V

IDS= 170mA

VDS= 3V

VGS= 0V

UNIT MIN. TYP. MAX.

Transconductance

8000

-2.5

Pinch-off Voltage

VGSoff

IDSS

-1.0

-5

-4.0

Saturated Drain Current

IGS= -500 A

Gate-Source Breakdown

Voltage

VGSO

Rth(c-c)

C/W

Thermal Resistance

Channel to Case

0.8

1.2

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Sep. 2004

12 3 4

下载PDF

与TIM7179-45SL相关器件

型号	品牌	描述	获取价格	数据表
TIM7179-4SL	TOSHIBA	TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET	获取价格
TIM7179-4UL	TOSHIBA	HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz	获取价格
TIM7179-60SL	TOSHIBA	IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level	获取价格
TIM7179-6UL	TOSHIBA	HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz	获取价格
TIM7179-8	TOSHIBA	TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power	获取价格
TIM7179-8L	TOSHIBA	TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power	获取价格