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TIM7179-60SL PDF预览

TIM7179-60SL

更新时间： 2024-02-22 22:43:12
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体射频场效应晶体管局域网
页数 文件大小 规格书
4页 159K
描述
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level

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中文翻译

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TIM7179-60SL 技术参数

生命周期：Active包装说明：HERMETIC SEALED, 2-16G1B, 3 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.06
Is Samacsys：N外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：15 V
最大漏极电流 (Abs) (ID)：20 AFET 技术：JUNCTION
最高频带：C BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：187.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管元件材料：SILICONBase Number Matches：1

TIM7179-60SL 数据手册

 浏览型号TIM7179-60SL的Datasheet PDF文件第2页浏览型号TIM7179-60SL的Datasheet PDF文件第3页浏览型号TIM7179-60SL的Datasheet PDF文件第4页 
MICROWAVE POWER GaAs FET  
MICROWAVE SEMICONDUCTOR  
TIM7179-60SL  
TECHNICAL DATA  
FEATURES  
„ LOW INTERMODULATION DISTORTION „ HIGH GAIN  
IM3=-45 dBc at Pout= 36.5dBm  
Single Carrier Level  
„ HIGH POWER  
G1dB=6.5dB at 7.1GHz to 7.9GHz  
„ BROAD BAND INTERNALLY MATCHED FET  
„ HERMETICALLY SEALED PACKAGE  
P1dB=48.0dBm at 7.1GHz to 7.9GHz  
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )  
°
CHARACTERISTICS  
Output Power at 1dB Gain  
Compression Point  
Power Gain at 1dB Gain  
Compression Point  
Drain Current  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
P1dB  
dBm 47.0 48.0  
⎯
G1dB  
VDS=10V  
f = 7.1 to 7.9GHz  
IDSset≅9.5A  
dB  
5.5  
6.5  
⎯
IDS1  
ΔG  
ηadd  
IM3  
A
dB  
%
13.2 15.0  
⎯
⎯
⎯
Gain Flatness  
±0.8  
⎯
⎯
37  
Power Added Efficiency  
3rd Order Intermodulation  
Distortion  
Two-Tone Test  
Po=36.5dBm  
dBc  
-42  
-45  
⎯
(Single Carrier Level)  
Drain Current  
IDS2  
A
11.8  
100  
⎯
⎯
⎯
⎯
C
°
Channel Temperature Rise  
ΔTch  
(VDS X IDS + Pin – P1dB)  
X Rth(c-c)  
Recommended Gate Resistance(Rg) : 28 Ω (Max.)  
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )  
°
CHARACTERISTICS  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
Transconductance  
gm  
VDS= 3V  
S
20  
-1.8  
38  
⎯
-1.0  
⎯
⎯
-3.0  
⎯
IDS= 12.0A  
VDS= 3V  
IDS= 200mA  
VDS= 3V  
Pinch-off Voltage  
VGSoff  
IDSS  
V
Saturated Drain Current  
A
VGS= 0V  
Gate-Source Breakdown  
Voltage  
VGSO  
Rth(c-c)  
IGS= -1.0mA  
V
-5  
⎯
⎯
C/W  
Thermal Resistance  
Channel to Case  
0.6  
0.8  
°
⎯
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is  
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.  
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.  
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA  
before proceeding with design of equipment incorporating this product.  
Rev. Aug. 2008  
1234

中文翻译

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