5秒后页面跳转
捷配首页

Datasheet > TIM7785-8L
TIM7785-8L PDF预览

TIM7785-8L

更新时间： 2024-01-03 09:35:27
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网放大器晶体管
页数 文件大小 规格书
5页 137K
描述
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power

阅读下载

中文翻译

获取价格

TIM7785-8L 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
风险等级：5.56外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：15 V
最大漏极电流 (Abs) (ID)：8 A最大漏极电流 (ID)：8 A
FET 技术：JUNCTION最高频带：C BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：DEPLETION MODE
最高工作温度：175 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：240极性/信道类型：N-CHANNEL
功耗环境最大值：37.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

TIM7785-8L 数据手册

 浏览型号TIM7785-8L的Datasheet PDF文件第2页浏览型号TIM7785-8L的Datasheet PDF文件第3页浏览型号TIM7785-8L的Datasheet PDF文件第4页浏览型号TIM7785-8L的Datasheet PDF文件第5页 
TOS HIBA  
MICROWAVE POWER GaAs FET  
TIM7785-8L  
Low Distortion Internally Matched Power GaAs FETs (C-Band)  
Features  
• Low intermodulation distortion  
- IM = -44 dBc at Po = 28 dBm,  
3
- Single carrier level  
• High power  
- P  
= 39 dBm at 7.7 GHz to 8.5 GHz  
1dB  
• High gain  
- G = 5.0 dB at 7.7 GHz to 8.5 GHz  
1dB  
• Broad band internally matched  
• Hermetically sealed package  
RF Performance Specifications (Ta = 25° C)  
Characteristics  
Output Power at 1dB  
Symbol  
Condition  
Unit  
Min.  
Typ.  
Max  
P
dBm  
38.0  
39.0  
–
–
1dB  
Compression Point  
Power Gain at 1dB  
Compression Point  
G
dB  
4.0  
5.0  
1dB  
V
= 10V  
DS  
f = 7.7 ~ 8.5 GHz  
Drain Current  
I
A
dB  
%
–
–
2.3  
–
2.8  
±0.6  
–
DS1  
Gain Flatness  
∆G  
Power Added Efficiency  
3rd Order Intermodulation Distortion  
Drain Current  
η
–
24  
-44  
2.3  
–
add  
IM  
dBc  
A
-41  
–
–
3
Note 1  
I
2.8  
80  
DS2  
Channel-Temperature Rise  
∆T  
V
xI xR (c-c)  
°C  
–
ch  
DS DS  
th  
Electrical Characteristics (Ta = 25° C)  
Characteristic  
Trans-conductance  
Symbol  
Condition  
Unit  
Min.  
Typ.  
Max  
V
= 3V  
DS  
gm  
mS  
V
–
1800  
–
I
= 3.0A  
DS  
V
= 3V  
DS  
Pinch-off Voltage  
V
I
-2  
-3.5  
-5.0  
GSoff  
DSS  
I
= 40mA  
DS  
V
V
= 3V  
= 0V  
DS  
GS  
Saturated Drain Current  
Gate-Source Breakdown Voltage  
Thermal Resistance  
A
V
–
-5  
–
5.8  
–
7.5  
–
V
I
= -120µA  
GS  
GSO  
Channel  
to case  
R
°C/W  
2.3  
3.5  
th (c-c)  
Note 1: 2 tone Test Pout = 28dBm Single Carrier Level.  
The information contained here is subject to change without notice.  
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties  
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic  
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-  
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types  
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.  
T O S H IB A C O R P O R A T IO N  
MW51080196  
1/5  
12345

中文翻译

下载PDF

与TIM7785-8L相关器件

型号 品牌 获取价格 描述 数据表
TIM7785-8SL TOSHIBA

获取价格

 		MICROWAVE POWER GaAs FET
TIM7785-8UL TOSHIBA

获取价格

 		MICROWAVE POWER GaAs FET
TIM7785-8UL_06 TOSHIBA

获取价格

 		HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz
TIM7984-14L TOSHIBA

获取价格

 		TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET
TIM7984-30L TOSHIBA

获取价格

 		TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power
TIM8224 TI

获取价格

 		TWO-PHASE CLOCK GENERATOR/DRIVER
TIM8224N TI

获取价格

 		IC,CPU SYSTEM CLOCK GENERATOR,BIPOLAR,DIP,16PIN,PLASTIC
TIM8228N TI

获取价格

 		IC,SYSTEM CONTROLLER,BIPOLAR,DIP,28PIN
TIM825K015P0X CDE

获取价格

 		Tantalum Capacitor, Polarized, Tantalum (dry/solid), 15V, 10% +Tol, 10% -Tol, 8.2uF, Throu
TIM8596-15 TOSHIBA

获取价格

 		MICROWAVE POWER GaAs FET

与TIM7785-8L相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证