生命周期: | Active | 包装说明: | HERMETIC SEALED, 2-16G1B, 2 PIN |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | Factory Lead Time: | 20 weeks |
风险等级: | 5.57 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 15 V |
最大漏极电流 (ID): | 20 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | C BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIM6472-6UL | TOSHIBA |
获取价格 |
HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz |
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TIM6472-8SL | TOSHIBA |
获取价格 |
TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET |
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TIM6472-8UL | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET |
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TIM6472-8UL_09 | TOSHIBA |
获取价格 |
HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz |
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TIM685M015P0X | CDE |
获取价格 |
Tantalum Capacitor, Polarized, Tantalum (dry/solid), 15V, 20% +Tol, 20% -Tol, 6.8uF, Throu |
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TIM7179-12UL | TOSHIBA |
获取价格 |
HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz |
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TIM7179-16 | TOSHIBA |
获取价格 |
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power |
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TIM7179-16EL | TOSHIBA |
获取价格 |
暂无描述 |
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TIM7179-16L | TOSHIBA |
获取价格 |
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power |
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TIM7179-16UL | TOSHIBA |
获取价格 |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz |
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