Datasheet > TIM6472-4UL_09

TIM6472-4UL_09

更新时间： 2022-12-19 10:56:48

品牌	Logo	应用领域
东芝 - TOSHIBA		高功率电源
页数	文件大小	规格书
4页	141K
描述
HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz

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TIM6472-4UL_09 数据手册

TIM6472-4UL

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )

CHARACTERISTICS

Drain-Source Voltage

SYMBOL

VDS

VGS

IDS

UNIT

RATING

Gate-Source Voltage

Drain Current

-5

3.5

Total Power Dissipation (Tc= 25 C)

Channel Temperature

Storage

Tch

175

Tstg

-65 to +175

PACKAGE OUTLINE (2-11D1B)

Unit in mm

c Gate

d Source

e Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds

at 260°C.

123 4

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型号	品牌	获取价格	描述	数据表
TIM6472-60SL	TOSHIBA	获取价格	TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET
TIM6472-6UL	TOSHIBA	获取价格	HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz
TIM6472-8SL	TOSHIBA	获取价格	TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET
TIM6472-8UL	TOSHIBA	获取价格	MICROWAVE POWER GaAs FET
TIM6472-8UL_09	TOSHIBA	获取价格	HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz
TIM685M015P0X	CDE	获取价格	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 15V, 20% +Tol, 20% -Tol, 6.8uF, Throu
TIM7179-12UL	TOSHIBA	获取价格	HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz
TIM7179-16	TOSHIBA	获取价格	TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power
TIM7179-16EL	TOSHIBA	获取价格	暂无描述
TIM7179-16L	TOSHIBA	获取价格	TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power