Datasheet > TGF2018

TGF2018

更新时间： 2024-09-18 01:20:19

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
8页	245K
描述
180 um Discrete GaAs pHEMT

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TGF2018 数据手册

TGF2018

180 um Discrete GaAs pHEMT

Applications

 Defense & Aerospace

 High-Reliability

 Test and Measurement

 Commercial

 Broadband Wireless

Product Features

Functional Block Diagram

 Frequency Range: DC - 20 GHz

 22 dBm Typical Output Power - P1dB

 14 dB Typical Gain at 12 GHz

 55% Typical PAE at 12 GHz

 1 dB Typical NF at 12 GHz

 No Vias

 Technology: 0.25 um GaAs pHEMT

 Chip Dimensions: 0.41 x 0.34 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2018 is a discrete 180 micron pHEMT

which operates from DC to 20 GHz. The TGF2018 is

fabricated using TriQuint’s proven standard 0.25 um

power pHEMT production process. This process

features advanced techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad Dimensions Terminals

G (71um X 71um)

D (71um X 71um)

S (121um X 71um)

Gate

Drain

Source

The TGF2018 typically provides 22 dBm of output power

at P1dB with gain of 14 dB and 55% power-added

efficiency at 1 dB compression. This performance

makes the TGF2018 appropriate for high efficiency

applications. The protective overcoat layer with silicon

nitride provides a level of environmental robustness and

scratch protection.

The TGF2018 is lead-free and RoHS compliant.

Ordering Information

Part

TGF2018

ECCN

EAR99

Description

180 um GaAs pHEMT

Datasheet: Rev. D 11-04-13

Disclaimer: Subject to change without notice

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