Datasheet > TC55V16256FTI

TC55V16256FTI

更新时间： 2024-11-06 22:53:11

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
11页	186K
描述
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TC55V16256FTI 数据手册

TC55V16256JI/FTI-12,-15

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

262,144-WORD BY 16-BIT CMOS STATIC RAM

DESCRIPTION

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144

words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

operates from a single 3.3 V power supply. Chip enable (CE ) can be used to place the device in a low-power mode,

and output enable (OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide lower and upper

byte access. This device is well suited to cache memory applications where high-speed access and high-speed

storage are required. All inputs and outputs are directly LVTTL compatible. The TC55V16256JI/FTI is available in

plastic 44-pin SOJ and 44-pin TSOP with 400mil width for high density surface assembly. The TC55V16256JI/FTI

guarantees −40° to 85°C operating temperature so it is suitable for use in wide operating temperature system.

FEATURES

•

Single power supply voltage of 3.3 V 0.3 V

Fully static operation

•

Fast access time (the following are maximum values)

TC55V16256JI/FTI-12:12 ns

All inputs and outputs are LVTTL compatible

Output buffer control using OE

Data byte control using LB (I/O1 to I/O8) and

UB (I/O9 to I/O16)

TC55V16256JI/FTI-15:15 ns

•

Low-power dissipation

(the following are maximum values)

Cycle Time

•

Package:

SOJ44-P-400-1.27 (JI)

(Weight: 1.64 g typ)

Operation (max) 230 200 170 150 mA

TSOP II44-P-400-0.80 (FTI) (Weight: 0.45 g typ)

Standby:10 mA (both devices)

PIN ASSIGNMENT (TOP VIEW)

44 PIN SOJ 44 PIN TSOP

PIN NAMES

A0 to A17

Address Inputs

44 A5

43 A6

42 A7

I/O1 to I/O16 Data Inputs/Outputs

Chip Enable Input

Write Enable Input

Output Enable Input

Data Byte Control Inputs

Power (+3.3 V)

I/O1

38 I/O16

37 I/O15

36 I/O14

35 I/O13

34 GND

33 V^DD

I/O1

I/O16

I/O15

I/O14

I/O13

GND

V^DD

I/O2

I/O3

I/O2

I/O3

I/O4

V^DD

I/O4 10

V^DD11

LB , UB

GND 12

I/O5 13

I/O6 14

I/O7 15

I/O8 16

GND

I/O5

I/O6

I/O7

I/O8

A15

A14

A13

A12

A16

32 I/O12

31 I/O11

30 I/O10

29 I/O9

28 NU

27 A8

26 A9

25 A10

24 A11

23 A17

I/O12

I/O11

I/O10

I/O9

GND

Ground

Not Usable (Input)

A15 18

A14 19

A13 20

A12 21

A16 22

A10

A11

A17

(TC55V16256JI)

(TC55V16256FTI)

2002-01-07 1/11

12 3 4 5 6 7...11

中文翻译

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与TC55V16256FTI相关器件

型号	品牌	获取价格	描述	数据表
TC55V16256FTI-12	TOSHIBA	获取价格	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V16256FTI-15	TOSHIBA	获取价格	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V16256J	TOSHIBA	获取价格	262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55V16256J-12	TOSHIBA	获取价格	262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55V16256J-15	TOSHIBA	获取价格	262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55V16256J-20	TOSHIBA	获取价格	IC 256K X 16 CACHE SRAM, 20 ns, PDSO44, PLASTIC, SOJ-44, Static RAM
TC55V16256JI	TOSHIBA	获取价格	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V16256JI-12	TOSHIBA	获取价格	IC 256K X 16 CACHE SRAM, 12 ns, PDSO44, PLASTIC, SOJ-44, Static RAM
TC55V16256JI-15	TOSHIBA	获取价格	IC 256K X 16 CACHE SRAM, 15 ns, PDSO44, PLASTIC, SOJ-44, Static RAM
TC55V16648BBFT-10	TOSHIBA	获取价格	65,536-WORD BY 16-BIT CMOS STATIC RAM

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