生命周期: | Obsolete | 零件包装代码: | TSOP2 |
包装说明: | TSOP2, | 针数: | 54 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.81 |
最长访问时间: | 12 ns | JESD-30 代码: | R-PDSO-G54 |
长度: | 22.22 mm | 内存密度: | 16777216 bit |
内存集成电路类型: | CACHE SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 54 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 1MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC55V16100FTI-15 | TOSHIBA |
获取价格 |
MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS | |
TC55V16256FT-12 | TOSHIBA |
获取价格 |
262,144-WORD BY 16-BIT CMOS STATIC RAM | |
TC55V16256FT-15 | TOSHIBA |
获取价格 |
262,144-WORD BY 16-BIT CMOS STATIC RAM | |
TC55V16256FTI | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55V16256FTI-12 | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55V16256FTI-15 | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55V16256J | TOSHIBA |
获取价格 |
262,144-WORD BY 16-BIT CMOS STATIC RAM | |
TC55V16256J-12 | TOSHIBA |
获取价格 |
262,144-WORD BY 16-BIT CMOS STATIC RAM | |
TC55V16256J-15 | TOSHIBA |
获取价格 |
262,144-WORD BY 16-BIT CMOS STATIC RAM | |
TC55V16256J-20 | TOSHIBA |
获取价格 |
IC 256K X 16 CACHE SRAM, 20 ns, PDSO44, PLASTIC, SOJ-44, Static RAM |