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SUM40N15-38 PDF预览

SUM40N15-38

更新时间: 2024-11-28 21:53:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 42K
描述
N-Channel 150-V (D-S) 175 C MOSFET

SUM40N15-38 数据手册

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SUM40N15-38  
Vishay Siliconix  
New Product  
N-Channel 150-V (D-S) 175_C MOSFET  
FEATURES  
D TrenchFETr Power MOSFETS  
D 175_C Junction Temperature  
D New Low Thermal Resistance Package  
D PWM Optimized  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.038 @ V = 10 V  
40  
38  
GS  
APPLICATIONS  
150  
0.042 @ V = 6 V  
GS  
D Primary Side Switch  
D
TO-263  
G
G
D S  
Top View  
Ordering Information: SUM40N15-38  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
150  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
T
= 25_C  
= 125_C  
40  
23  
80  
40  
80  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
C
A
Pulsed Drain Current  
Avalanche Current  
I
DM  
I
AR  
a
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
mJ  
b
T
T
= 25_C  
166  
C
a
Maximum Power Dissipation  
P
W
D
c
= 25_C  
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
Junction-to-Ambient (PCB Mount TO-263 )  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case (Drain)  
R
0.9  
Notes  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 72155  
S-03534—Rev. A, 24-Mar-03  
www.vishay.com  
1

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