Datasheet > SUM110N04-05H_08

SUM110N04-05H_08

更新时间： 2024-01-01 05:09:16

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威世 - VISHAY		/
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描述
N-Channel 40-V (D-S) 175 °C MOSFET

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SUM110N04-05H_08 数据手册

SUM110N04-05H

Vishay Siliconix

N-Channel 40-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

175 °C Junction Temperature

RoHS

0.0053 at V_GS= 10 V

110

COMPLIANT

High Threshold Voltage at High Temperature

TO-263

D S

Top View

N-Channel MOSFET

Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

110

Continuous Drain Current (T_J= 175 °C)

I_D

T_C= 125 °C

I_DM

I_AR

Pulsed Drain Current

Avalanche Current

300

Repetitive Avalanche Energy^a

E_AR

L = 0.1 mH

T_C= 25 °C

125

150^b

3.75

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient

Junction-to-Case

PCB Mount^c

R_thJA

°C/W

R_thJC

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

Document Number: 73131

S-80274-Rev. B, 11-Feb-08

www.vishay.com

12 3 4 5 6

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