Datasheet > STWA40N95K5

STWA40N95K5

更新时间： 2023-12-20 18:45:24

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	734K
描述
N沟道950 V、0.110 Ohm典型值、38 A MDmesh K5功率MOSFET，TO-247长引线封装

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STWA40N95K5 数据手册

STWA40N95K5

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

± 30

Unit

V_GS

I_D

Gate- source voltage

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

I_D

(1)

I_DM

152

450

P_TOT

I_AR

Total dissipation at T_C= 25 °C

Max current during repetitive or single pulse avalanche

Single pulse avalanche energy

E_AS

700

(starting T_J= 25 °C, I_D= 13 A, V_DD= 50 V)

dv/dt ⁽²⁾

dv/dt ⁽³⁾

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

4.5

V/ns

T_j

Operating junction temperature

Storage temperature

-55 to 150

°C

T_stg

Notes:

⁽¹⁾Pulse width limited by safe operating area.

(2)

≤ 19 A, di/dt ≤ 100 A/µs, V_DS(peak)≤ V_(BR)DSS.

≤ 760 V

(3)

Table 3: Thermal data

Parameter

Symbol

R_thj-case

R_thj-amb

Value

0.28

Unit

Thermal resistance junction-case max

Thermal resistance junction-amb max

°C/W

DocID028207 Rev 1

3/13

1 234 5 6 7...13

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