Datasheet > STW56N60M2-4

STW56N60M2-4

更新时间： 2023-12-20 18:44:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	409K
描述
N沟道600 V、0.045 Ohm典型值、52 A MDmesh M2功率MOSFET，TO247-4封装

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STW56N60M2-4 数据手册

STW56N60M2-4

Datasheet

N-channel 600 V, 45 mΩ typ., 52 A MDmesh M2 Power MOSFET

in a TO247-4 package

Features

at T max.

DS(on)

max.

Order code

STW56N60M2-4

650 V

55 mΩ

52 A

•

Extremely low gate charge

Excellent output capacitance (C_oss) profile

100% avalanche tested

Zener-protected

TO247-4

Drain(1, TAB)

Excellent switching performance thanks to the extra driving source pin

Applications

•

Switching applications

Gate(4)

Description

Driver

source (3)

This device is an N-channel Power MOSFET developed using MDmesh M2

Power

source (2)

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

AM10177v2Z

Product status link

STW56N60M2-4

Product summary

Order code

Marking

STW56N60M2-4

56N60M2

TO247-4

Tube

Package

Packing

DS10508 - Rev 4 - August 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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