Datasheet > STW55NM60N

STW55NM60N

更新时间： 2024-02-21 10:24:24

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	319K
描述
51A, 600V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN

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STW55NM60N 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-247AC
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.69	雪崩能效等级（Eas）：	850 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	600 V
最大漏极电流 (Abs) (ID)：	51 A	最大漏极电流 (ID)：	51 A
最大漏源导通电阻：	0.06 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-247AC	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	350 W	最大脉冲漏极电流 (IDM)：	204 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

STW55NM60N 数据手册

STW55NM60N

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与STW55NM60N相关器件

型号	品牌	描述	获取价格	数据表
STW55NM60ND	STMICROELECTRONICS	N-channel 600 V - 0.047 ヘ - 51 A TO-247 FDmes	获取价格
STW56N60DM2	STMICROELECTRONICS	N沟道600 V、0.052 Ohm典型值、50 A MDmesh DM2功率MOSFET	获取价格
STW56N60M2	STMICROELECTRONICS	N沟道600 V、0.045 Ohm典型值、52 A MDmesh M2功率MOSFET，	获取价格
STW56N60M2-4	STMICROELECTRONICS	N沟道600 V、0.045 Ohm典型值、52 A MDmesh M2功率MOSFET，	获取价格
STW56N65DM2	STMICROELECTRONICS	N沟道650 V、0.058 Ohm典型值、48 A MDmesh DM2功率MOSFET	获取价格
STW56N65M2	STMICROELECTRONICS	N沟道650 V、0.049 Ohm典型值、49 A MDmesh M2功率MOSFET，	获取价格

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