Datasheet > STW52N60DM6

STW52N60DM6

更新时间： 2023-12-20 18:45:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	232K
描述
N-channel 600 V, 64 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-247 package

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STW52N60DM6 数据手册

STW52N60DM6

Electrical characteristics (curves)

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

Figure 2. Maximum transient thermal impedance

GADG100220211309SOA

GADG250120211029ZTH

I_D

Z_thJC

(°C/W)

(A)

I_DM

0.4

0.3 0.2

duty=0.5

10 ²

10 ¹

10 ⁰

t_p=1µs

10 ^-1

10 ^-2

t_p=10µs

R_DS(on)max.

t_p=100µs

0.1

0.05

R_thJC= 0.35 °C/W

duty = t_on/ T

Single pulse

t_p=1ms

V_(BR)DSS

10 ^-3

10 ^-4

10 ^-1

10 ^-2

T_J= 150 °C,

T_C= 25 °C,

Single pulse

t_on

t_p=10ms

V_DS(V)

10 ^-1

10 ⁰

10 ¹

10 ²

10 ^-610 ^-510 ^-410 ^-310 ^-210 ^-1

t_p(s)

Figure 3. Typical output characteristics

Figure 4. Typical transfer characteristics

GADG141220201039OCH

GADG141220201145TCH

I_D

(A)

V_GS=10V

120

100

V_DS=18V

10 12 14 16 V_DS(V)

V_GS(V)

Figure 5. Typical gate charge characteristics

Figure 6. Typical drain-source on-resistance

V_DS

(V)

GADG141220201041QVG

GADG260120210838RID

R_DS(on)

(mΩ)

V_GS

(V)

V_DD=480V, I_D=40A

Q_g

500

400

300

200

V_GS= 10 V

Q_gs

Q_gd

V_GS

100

V_DS

Q_g(nC)

I_D(A)

DS13632 - Rev 1

page 5/12

1 2 3 456 7 8...12

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