Datasheet > STW52N60DM6

STW52N60DM6

更新时间： 2023-12-20 18:45:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	232K
描述
N-channel 600 V, 64 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-247 package

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STW52N60DM6 数据手册

STW52N60DM6

Electrical characteristics

T_C= 25 °C unless otherwise specified.

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

= 0 V, I = 1 mA

Drain-source breakdown voltage

600

(BR)DSS

= 0 V, V = 600 V

µA

Zero gate voltage drain current

DSS

= 0 V, V = 600 V, T = 125 °C⁽¹⁾

100

±5

= 0 V, V = ±25 V

Gate-body leakage current

Gate threshold voltage

GSS

= V , I = 250 µA

3.25

4.00

4.75

GS(th)

DS(on)

= 10 V, I = 22.5 A

Static drain-source on-resistance

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Input capacitance

Test conditions

Min.

Typ. Max. Unit

iss

2468

178

1.47

416

1.6

Ω

oss

= 100 V, f = 1 MHz, V = 0 V

Output capacitance

rss

Reverse transfer capacitance

Equivalent output capacitance

Intrinsic gate resistance

Total gate charge

(1)

= 0 to 480 V, V = 0 V

oss eq.

f = 1 MHz, I = 0 A

= 480 V, I = 40 A, V = 0 to 10 V

D GS

Gate-source charge

(see Figure 14. Test circuit for gate

charge behavior)

Gate-drain charge

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

when V increases from 0

oss DS

to 80% V

DSS

Table 6. Switching times

Test conditions

Symbol

Parameter

Min.

Typ. Max. Unit

Turn-on delay time

Rise time

20.8

13.7

65.7

= 300 V, I = 20 A,

d(on)

= 4.7 Ω, V = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time waveform)

Turn-off delay time

Fall time

d(off)

DS13632 - Rev 1

page 3/12

1 234 5 6 7...12

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