Datasheet > STW52N60DM6

STW52N60DM6

更新时间： 2023-12-20 18:45:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	232K
描述
N-channel 600 V, 64 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-247 package

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STW52N60DM6 数据手册

STW52N60DM6

Electrical ratings

Table 1. Absolute maximum ratings

Parameter

Symbol

Value

±25

Unit

Gate-source voltage

Drain current (continuous) at T = 25 °C

Drain current (continuous) at T = 100 °C

(1)

Drain current (pulsed)

128

357

100

1000

100

Total power dissipation at T = 25 °C

TOT

dv/dt⁽²⁾

di/dt⁽²⁾

dv/dt⁽³⁾

Peak diode recovery voltage slope

Peak diode recovery current slope

MOSFET dv/dt ruggedness

V/ns

A/µs

V/ns

°C

Storage temperature range

stg

-55 to 150

Operating junction temperature range

°C

1. Pulse width limited by safe operating area.

≤ 45 A, V (peak) < V

, V = 400 V.

(BR)DSS DD

≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

0.35

Unit

°C/W

thJC

Thermal resistance, junction-to-case

Thermal resistance, junction-to-ambient

thJA

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive (pulse width limited by T max)

Single pulse avalanche energy (starting T = 25 °C, I = I , V = 50 V)

690

DS13632 - Rev 1

page 2/12

123 4 5 6 7...12

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