Datasheet > STT3402N

STT3402N

更新时间： 2024-09-21 08:58:47

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	461K
描述
N-Channel Enhancement Mode Mos.FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STT3402N 数据手册

STT3402N

6.3 A, 30 V, R_DS(ON)27 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TSOP-6

DESCRIPTION

These miniature surface mount MOSFETs utilize High Cell Density

process. Low R_DS(on)assures minimal power loss and conserves energy,

making this device ideal for use in power management circuitry. Typical

applications are power switch, power management in portable and

battery-powered products such as computers, printers, PCMCIA cards,

cellular and cordless telephones.

TYPICAL APPLICATIONS



Low R_DS(on)Provides Higher Efficiency and

Extends Battery Life.

D G



Low Gate Charge.

Fast Switch.

Miniature TSOP-6 Surface Mount Package

Saves Board Space.

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

2.70

2.60

1.40

3.10

3.00

1.80

0.10

0.60 REF.

0.12 REF.

1.10 MAX.

1.90 REF.

0°

10°

PRODUCT SUMMARY

0.95 REF.

0.30

0.50

STT3402N

I_D(A)

6.3

5.5

V_DS(V)

R_DS(on) (m

0.027@V_GS= 10V

0.035@V_GS= 4.5V

PACKAGE INFORMATION

Package

MPQ

LeaderSize

TSOP-6

7’ inch

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_A= 25°C

T_A= 70°C

6.3

5.2

±20

1.3

1.6

1.0

Continuous Drain Current ¹

I_D

Pulsed Drain Current ²

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

I_DM

I_S

T_A= 25°C

T_A= 70°C

P_D

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ 150

°C

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Unit

Maximum Junction to Ambient ¹

t ≦ 5 sec

R_JA

°C / W

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

19-Nov-2010 Rev. A

Page 1 of 4

12 3 4

中文翻译

下载PDF

与STT3402N相关器件

型号	品牌	获取价格	描述	数据表
STT3405P	SECOS	获取价格	P-Channel Enhancement Mode MOSFET
STT3423P	SECOS	获取价格	P-Channel Enhancement Mode Mos.FET
STT3434	SECOS	获取价格	N-Channel Enhancement Mode Power Mos.FET
STT3434N	SECOS	获取价格	N-Channel Enhancement Mode MOSFET
STT3455	SECOS	获取价格	P-Channel Enhancement Mode Power Mos.FET
STT3457P	SECOS	获取价格	P-Channel Enhancement Mode MOSFET
STT3458N	SECOS	获取价格	3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
STT3458N_12	SECOS	获取价格	3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET
STT3463P	SECOS	获取价格	P-Channel Enhancement Mode MOSFET
STT3470N	SECOS	获取价格	N-Channel Enhancement Mode Mos.FET