Datasheet > STT3458N

STT3458N

更新时间： 2024-02-20 21:25:48

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	420K
描述
3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET

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STT3458N 数据手册

STT3458N

3.4A , 60V , R_DS(ON)92 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

TSOP-6

These miniature surface mount MOSFETs utilize

High Cell Density process. Low R_DS(on)assures minimal

power loss and conserves energy, making this device

ideal for use in power management circuitry.

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.



Low gate charge

Fast switch

Miniature TSOP-6 surface mount package

saves board space

D G

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

2.70

2.60

1.40

1.10 MAX.

1.90 REF.

3.10

3.00

1.80

0.10

APPLICATION

Power switch, power management in portable

and battery-powered products such as computers,

0.60 REF.

0.12 REF.

0°

10°

0.95 REF.

0.30

0.50

printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

Package

MPQ

Leader Size

TSOP-6

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A= 25°C

T_A= 70°C

3.4

Continuous Drain Current ¹

I_D

2.7

Pulsed Drain Current ²

I_DM

I_S

±15

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

1.7

T_A= 25°C

T_A= 70°C

P_D

1.3

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 150

°C

Thermal Resistance Ratings

t≦5 sec

62.5

110

Maximum Junction to Ambient ¹

R_θJA

°C / W

Steady State

Notes

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

05-Mar-2012 Rev. B

Page 1 of 4

12 3 4

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