Datasheet > STT3405P

STT3405P

更新时间： 2024-09-21 08:58:47

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SECOS		/
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描述
P-Channel Enhancement Mode MOSFET

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STT3405P 数据手册

STT3405P

-4.9 A, -20 V, R_DS(ON)56 m

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

TSOP-6

These miniature surface mount MOSFETs utilize

a high cell density process. Low R_DS(on)assures minimal

power loss and conserves energy, making this device

ideal for use in power management circuitry. Typical

applications are PWMDC-DC converters, power management

in portable and battery-powered products such as computers,

printers, battery charger, telecommunication power system,

and telephones power system.

D G

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.

Miniature TSOP-6 surface mount package saves

board space.

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

2.70

2.60

1.40

3.10

3.00

1.80

0.10

0.60 REF.

0.12 REF.

High power and current handling capability.

1.10 MAX.

1.90 REF.

0°

10°

0.95 REF.

0.30

0.50

PACKAGE INFORMATION

Package

MPQ

LeaderSize

TSOP-6

7’ inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

±12

T_A= 25°C

T_A= 70°C

-4.9

-4.0

-20

-1.7

1.3

Continuous Drain Current ¹

I_D

Pulsed Drain Current ²

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

I_DM

I_S

T_A= 25°C

T_A= 70°C

P_D

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ 150

°C

Thermal Resistance Ratings

62.5

110

Maximum Junction to Ambient ¹

t ≦ 5 sec

R_JA

°C / W

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

06-Jan-2011 Rev. A

Page 1 of 4

12 3 4

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