Datasheet > STS3DPF20V

STS3DPF20V

更新时间： 2024-11-23 22:14:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	261K
描述
DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET⑩ POWER MOSFET

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STS3DPF20V 数据手册

STS3DPF20V

DUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8

STripFET™ POWER MOSFET

TYPE

DSS

DS(on)

STS3DPF20L

20 V

<0.11 Ω

3 A

■

TYPICAL R (on) = 0.090 Ω @ 4.5 V

TYPICAL R (on) = 0.1 Ω @ 2.7 V

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

ULTRA LOW THRESHOLD

■

GATE DRIVE (2.7 V)

SO-8

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

■

MOBILE PHONE APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

DGR

Drain-gate Voltage (R = 20 kΩ)

Gate- source Voltage

± 12

Drain Current (continuous) at T = 25°C Single Operation

1.9

Drain Current (continuous) at T = 100°C Single Operation

(•)

Drain Current (pulsed)

Total Dissipation at T = 25°C Dual Operation

1.6

tot

Total Dissipation at T = 25°C Single Operation

(•) Pulse width limited by safe operating area.

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

June 2002

1/8

12 3 4 5 6 7 8

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