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STS4DPF20L PDF预览

STS4DPF20L

更新时间: 2024-02-15 12:09:48
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
8页 251K
描述
DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET

STS4DPF20L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SOP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/5296.3.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=5296
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=52963D View:https://componentsearchengine.com/viewer/3D.php?partID=5296
Samacsys PartID:5296Samacsys Image:https://componentsearchengine.com/Images/9/STS4DPF20L.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/3/STS4DPF20L.jpgSamacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:STS4DPF20LSamacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N其他特性:LOW THRESHOLD
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):16 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STS4DPF20L 数据手册

 浏览型号STS4DPF20L的Datasheet PDF文件第2页浏览型号STS4DPF20L的Datasheet PDF文件第3页浏览型号STS4DPF20L的Datasheet PDF文件第4页浏览型号STS4DPF20L的Datasheet PDF文件第5页浏览型号STS4DPF20L的Datasheet PDF文件第6页浏览型号STS4DPF20L的Datasheet PDF文件第7页 
STS4DPF20L  
DUAL P-CHANNEL 20V - 0.07 - 4A SO-8  
STripFET™ POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STS4DPF20L  
20 V  
<0.08 Ω  
4 A  
TYPICAL R (on) = 0.07 Ω  
DS  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW THRESHOLD DRIVE  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
POWER MANAGEMENT IN CELLULAR  
PHONES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
20  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
20  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
± 16  
V
Drain Current (continuos) at T = 25°C Single Operation  
4
2.5  
A
A
C
I
D
Drain Current (continuos) at T = 100°C Single Operation  
C
I
()  
DM  
Drain Current (pulsed)  
16  
A
Total Dissipation at T = 25°C Dual Operation  
1.6  
2
W
W
C
P
tot  
Total Dissipation at T = 25°C Single Operation  
C
() Pulse width limited by safe operating area.  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
February 2002  
1/8  
.

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