Datasheet > STS4NM20N

STS4NM20N

更新时间： 2024-11-26 23:35:23

品牌	Logo	应用领域
其他 - ETC		栅极
页数	文件大小	规格书
6页	140K
描述
N-CHANNEL 200V 0.11 OHM 4A SO-8 ULTRA LOW GATE CHARGE MDMESH II MOSFET

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STS4NM20N 数据手册

STS4NM20N

N-CHANNEL 200V - 0.11Ω - 4A SO-8

ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

TARGET DATA

TYPE

DSS

DS(on)

STS4NM20N

200 V

< 0.13 Ω

■

WORLDWIDE LOWEST GATE CHARGE

TYPICAL R (on) = 0.11Ω

HIGH dv/dt and AVALANCHE CAPABILITIES

LOW INPUT CAPACITANCE

LOW GATE RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

SO-8

DESCRIPTION

This 200V MOSFET with a new advanced layout

brings all unique advantages of MDmesh technolo-

gy to lower voltages. The device exhibits worldwide

lowest gate charge for any given on-resistance.Its

use is therefore ideal as primary switch in isolated

DC-DC converters for Telecom and Computer appli-

cations.Used in combination with secondary-side

low-voltage STripFET^TMproducts, it contributes to

reducing losses and boosting efficiency

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh^TMfamily is very suitable for increasing

power density allowing system miniaturization and

higher efficiencies

ORDERING INFORMATION

SALES TYPE

MARKING

PACKAGE

SO-8

PACKAGING

STS4NM20N

S4NM20N

TAPE & REEL

March 2003

1/6

12 3 4 5 6

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