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STS4DPF30L PDF预览

STS4DPF30L

更新时间: 2024-02-10 06:30:26
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
6页 111K
描述
DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET

STS4DPF30L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SO-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.8
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/5297.3.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=5297
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=52973D View:https://componentsearchengine.com/viewer/3D.php?partID=5297
Samacsys PartID:5297Samacsys Image:https://componentsearchengine.com/Images/9/STS4DPF30L.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/3/STS4DPF30L.jpgSamacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:STS4DPF30L-1Samacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):16 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STS4DPF30L 数据手册

 浏览型号STS4DPF30L的Datasheet PDF文件第2页浏览型号STS4DPF30L的Datasheet PDF文件第3页浏览型号STS4DPF30L的Datasheet PDF文件第4页浏览型号STS4DPF30L的Datasheet PDF文件第5页浏览型号STS4DPF30L的Datasheet PDF文件第6页 
STS4DPF30L  
DUAL P-CHANNEL 30V - 0.07 - 4A SO-8  
STripFET™ POWER MOSFET  
PRELIMINARY DATA  
V
R
I
D
TYPE  
DSS  
DS(on)  
STS4DPF30L  
30 V  
<0.08 Ω  
4 A  
TYPICAL R (on) = 0.07 Ω  
DS  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW THRESHOLD DRIVE  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
POWER MANAGEMENT IN CELLULAR  
PHONES  
DC-DC CONVERTER  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
DGR  
Drain-gate Voltage (R = 20 k)  
30  
V
GS  
V
Gate- source Voltage  
± 16  
V
GS  
Drain Current (continuous) at T = 25°C Single Operation  
4
2.5  
A
A
C
I
D
Drain Current (continuous) at T = 100°C Single Operation  
C
I
()  
DM  
Drain Current (pulsed)  
16  
A
Total Dissipation at T = 25°C Dual Operation  
2.0  
1.6  
W
W
C
P
tot  
Total Dissipation at T = 25°C Single Operation  
C
() Pulse width limited by safe operating area.  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
April 2002  
1/6  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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